Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers

GROWTH TEMPERATURE DEPENDENCE OF Ge QUANTUM DOTS GROWN ON CARBON-IMPLANTED SI SUBSTRATES

Due to the low-dimensional confinement effect, self-assembled Ge quantum dots (QDs) grown on Si are expected to demonstrate novel optoelectronic properties, which can be applied to Si-based technology competitive with traditional optoelectronic III-V and other materials. However, this self-assembled method has not achieved the dot diameter and density comparable to those grown with the III-V se...

Study of intersubband transitions in Si1-xGex/Si quantum wells using 14-band k⋅p model

Optical intersubband transitions (ISTs) for both in-plane polarization (TE) and normalto-plane polarization (TM) in p-type Si1-xGex/Si multiple quantum wells (MQWs) are investigated using 14-band k⋅p model combined with the envelope-function Fourier expansion method. The results show that the amplitudes of different intersubband transitions for TE and TM polarizations, and the overall absorptio...

Infrared absorption of n-type tensile-strained Ge-on-Si.

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct Γ valley in n+ Ge-on-Si is reported for the first time to our knowledge. The intervalley absorption edge is in good agreement with the theoretical value. On the other hand, we found that the classical λ2-dependent Drude model...